Method of forming a structure over a semiconductor substrate
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United States of America Patent
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Jul 15, 2008
Grant Date -
Jul 29, 2004
app pub date -
Jan 14, 2004
filing date -
Jun 22, 2000
priority date (Note) -
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Abstract
The invention includes a method of forming a structure over a semiconductor substrate. A silicon dioxide containing layer is formed across at least some of the substrate. Nitrogen is formed within the silicon dioxide containing layer. Substantially all of the nitrogen within the silicon dioxide is at least 10 .ANG. above the substrate. After the nitrogen is formed within the silicon dioxide layer, conductively doped silicon is formed on the silicon dioxide layer.
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