Substrate with adhesive bonding metallization with diffusion barrier
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United States of America Patent
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Jul 15, 2008
Grant Date -
Nov 9, 2006
app pub date -
May 3, 2005
filing date -
May 3, 2005
priority date (Note) -
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Abstract
A metallization layer that includes a tantalum layer located on the component, a tantalum silicide layer located on the tantalum layer, and a platinum silicide layer located on the tantalum silicide layer. In another embodiment the invention is a component having a metallization layer on the component. In another embodiment, the metallization layer has a post-annealing adhesive strength to silicon of at least about 100 MPa as measured by a mechanical shear test after exposure to a temperature of about 600.degree. C. for about 30 minutes, and the metallization layer remains structurally intact after exposure to a temperature of about 600.degree. C. for about 1000 hours. The metallization is useful for bonding with brazing alloys.
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