Apparatus and method of measuring defects in an ion implanted wafer by heating the wafer to a treatment temperature and time to substantially stabilize interstitial defect migration while leaving the vacancy defects substantially unaltered.
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United States of America Patent
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Jul 22, 2008
Grant Date -
Dec 14, 2006
app pub date -
Mar 14, 2006
filing date -
Mar 14, 2005
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention relates to the use of the metrology methods and the related apparatus disclosed herein that incorporate thermal treatment devices and methods that improve defect detection. Specifically, in one aspect the invention relates to method of thermally treating a semiconductor wafer such that an acceleration of interstitial defect migration is achieved while leaving vacancy defects substantially unaltered.
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