Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor

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Jul 29, 2008
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Sep 14, 2006
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May 15, 2006
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Nov 13, 2003

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Abstract

A method of monolithically fabricating a lateral double-diffused MOSFET (LDMOS) transistor having a source, drain, and a gate on a substrate, with a process flow that is compatible with a CMOS process flow, is disclosed.

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VOLTERRA SEMICONDUCTOR CORPORATION	47467 FREMONT BOUELVARD FREMONT CA 94538

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
You, Budong	Fremont, CA	51	969
Zuniga, Marco A	Fremont, CA	83	1809

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Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor

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United States of America Patent

11435079

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PATENT NO	7405117
APP PUB NO	20060205168A1
SERIAL NO	11435079
DOCKET NO

US Family Size	Non-US Coverage
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DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
July 29, 2008	US,7405117,B2 US7405117B2	GRANTED PATENT AS SECOND PUBLICATION
September 14, 2006	US,20060205168,A1 US20060205168A1	FIRST PUBLISHED PATENT APPLICATION

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11435079

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