Self-calibration in non-contact surface photovoltage measurement of depletion capacitance and dopant concentration
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United States of America Patent
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Jul 29, 2008
Grant Date -
Sep 21, 2006
app pub date -
Mar 16, 2006
filing date -
Mar 16, 2005
priority date (Note) -
Expired
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Abstract
The surface photovoltage dopant concentration measurement of a semiconductor wafer is calibrated by biasing the semiconductor wafer into an avalanche breakdown condition in a surface depletion region; determining a contact potential difference value corresponding to an avalanche breakdown; determining small signal ac-surface photovoltage value corresponding to an avalanche breakdown; and using the values of the contact potential and the surface photovoltage to calculate a calibration constant that relates depletion layer capacitance and an inverse of the surface photovoltage.
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