Method and apparatus for programming single-poly pFET-based nonvolatile memory cells
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United States of America Patent
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Aug 5, 2008
Grant Date -
Jan 25, 2007
app pub date -
Sep 26, 2006
filing date -
Sep 16, 2002
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Abstract
Methods and apparatuses for programming a single-poly pFET-based nonvolatile memory cell bias the cell so that band-to-band tunneling (BTBT) is induced and electrons generated by the BTBT are injected onto a floating gate of the cell. Following a predetermined event, the single-poly pFET is biased to induce impact-ionized hot-electron injection (IHEI). The predetermined event may be, for example, the expiration of a predetermined time period or a determination that a channel has been formed by the BTBT injection process that is sufficiently conducting to support IHEI. Employing BTBT permits a previously overerased or stuck bit to be 'unstuck' or 'removed' and thus be made usable (i.e., able to be programmed) again.
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