Field-effect transistor and method for manufacturing the same
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United States of America Patent
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Aug 12, 2008
Grant Date -
Mar 20, 2008
app pub date -
Sep 7, 2007
filing date -
Sep 15, 2006
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Expired
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Abstract
A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or deuterium is added; and, causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.
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