Method of removing photoresist and photoresist rework method

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United States of America Patent

PATENT NO 7413848
APP PUB NO 20070026340A1
SERIAL NO

11161209

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Abstract

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A method of removing photoresist is provided. In the whole process of removing the photoresist, plasma is not used. Instead, a first solution is used in a first removal step to remove a photoresist layer. Then, a second solution is used in a second removal step to completely remove the photoresist layer. The first solution and the second solution have different polarities, and the polarity of the first solution is large than that of the second solution.

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Patent Owner(s)

Patent OwnerAddress
UNITED MICROELECTRONICS CORPHSIN-CHU CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chung, Lien-Sheng Hsinchu, TW 6 13
Lin, Hsin-Hsu Taipei County, TW 3 3
Wei, Chi-Hung Hsinchu, TW 4 40

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