Spacer electrode small pin phase change memory RAM and manufacturing method
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United States of America Patent
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Aug 19, 2008
Grant Date -
May 17, 2007
app pub date -
Jun 14, 2006
filing date -
Nov 16, 2005
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Abstract
A memory device comprising a first pan-shaped electrode having a side wall with a top side, a second pan-shaped electrode having a side wall with a top side and an insulating wall between the first side wall and the second side wall. The insulating wall has a thickness between the first and second side walls near the respective top sides. A bridge of memory material crosses the insulating wall, and defines an inter-electrode path between the first and second electrodes across the insulating wall. An array of such memory cells is provided. The bridges of memory material have sub-lithographic dimensions.
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