Method of manufacturing a metal-insulator-metal capacitor
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United States of America Patent
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Aug 19, 2008
Grant Date -
Jun 15, 2006
app pub date -
Feb 13, 2006
filing date -
Jul 20, 2004
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Abstract
The present invention provides method of manufacturing a metal-insulator-metal capacitor (100). A method of manufacturing includes depositing a first refractory metal layer (105) over a semiconductor substrate (110). The first refractory metal layer (105) over a capacitor region (200) of the semiconductor substrate (110) is removed and a second refractory metal (300) is deposited over the capacitor region (200). Other aspects of the present invention include a metal-insulator-metal capacitor (900) and a method of manufacturing an integrated circuit (1000).
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