Semiconductor device having a trench capacitor and a MOSFET connected by a diffusion layer and manufacturing method thereof
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United States of America Patent
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Aug 26, 2008
Grant Date -
Aug 18, 2005
app pub date -
Jan 14, 2005
filing date -
Jul 15, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device comprises a semiconductor substrate having a first conductivity type, a trench capacitor, provided in the semiconductor substrate, having a charge storage region, a gate electrode provided on the semiconductor substrate via a gate insulating film, first and second impurity regions, provided at both ends of the gate electrode, respectively, having a second conductivity type, an isolation insulating film provided adjacent to the trench capacitor in the semiconductor substrate to cover an upper surface of the charge storage region, a buried strap region having the second conductivity type, the buried strap region being provided to electrically connect an upper portion of the charge storage region to the first impurity region in the semiconductor substrate, and a pocket implantation region having the first conductivity type, the pocket implantation region being provided only under the second impurity region and being spaced apart from the strap region.
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