Single-mask phase change memory element
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United States of America Patent
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Sep 9, 2008
Grant Date -
Dec 13, 2007
app pub date -
May 24, 2006
filing date -
May 24, 2006
priority date (Note) -
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Abstract
A memory device. An array of memory elements is formed on a semiconductor chip. A parallel array of word lines extends in a first direction, connecting each memory element to a data source, and a parallel array of bit lines extends in a second direction, connecting each memory element to a data source, the second direction forming an acute angle to the first direction. The connection between each bit line and each memory element is a phase change element composed of memory material having at least two solid phases.
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