Memory array for increased bit density
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United States of America Patent
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Sep 23, 2008
Grant Date -
Oct 26, 2006
app pub date -
Apr 22, 2005
filing date -
Apr 22, 2005
priority date (Note) -
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Abstract
A memory array having a plurality of resistance variable memory units and method for forming the same are provided. Each memory unit includes a first electrode, a resistance variable material over the first electrode, and a first second-electrode over the resistance variable material. The first second-electrode is associated with the first electrode to define a first memory element. Each memory unit further includes a second second-electrode over the resistance variable material. The second-second electrode is associated with the first electrode to define a second memory element.
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