Method and apparatus for providing precursor gas to a processing chamber
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United States of America Patent
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Sep 30, 2008
Grant Date -
May 17, 2007
app pub date -
Dec 19, 2006
filing date -
Jul 17, 2002
priority date (Note) -
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Abstract
In one embodiment, an apparatus for generating a gaseous chemical precursor used in a vapor deposition processing system is provided which includes a canister comprising a sidewall, a top, and a bottom encompassing an interior volume therein, an inlet port and an outlet port in fluid communication with the interior volume, and an inlet tube extending from the inlet port into the canister. The apparatus further may contain a plurality of baffles within the interior volume extending between the top and the bottom of the canister, and a precursor slurry contained within the interior volume, wherein the precursor slurry contains a solid precursor material and a thermally conductive material that is unreactive towards the solid precursor material. In one example, the solid precursor material solid precursor material is pentakis(dimethylamino) tantalum.
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