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Abstract

In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer. Some examples provide that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas (e.g., diborane or silane) during an atomic layer deposition process. The tungsten layer may have a thickness of about 50 .ANG. or less and tungsten nitride layer may have an electrical resistivity of about 380 .mu..OMEGA.-cm or less. Other examples provide that a tungsten bulk layer may be deposited on the tungsten nitride layer by a chemical vapor deposition process.

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First Claim