Semiconductor device having halo implanting regions
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 30, 2008
Grant Date -
Nov 10, 2005
app pub date -
Apr 26, 2005
filing date -
May 7, 2004
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A MIS-type semiconductor device includes a p-type semiconductor substrate, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film, and n-type diffused source and drain layers formed in regions of the semiconductor substrate located below both sides of the gate electrode. Insides of the n-type diffused source and drain layers are formed with p-type impurity implanted regions having a lower p-type impurity concentration than the impurity concentration of the n-type diffused source and drain layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully