Methods of forming a nitrogen enriched region

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7432166
APP PUB NO 20020094621A1
SERIAL NO

10050373

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The invention encompasses a method of incorporating nitrogen into a silicon-oxide-containing layer. The silicon-oxide-containing layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer. The nitrogen is subsequently thermally annealed within the layer to bond at least some of the nitrogen to silicon within the layer. The invention also encompasses a method of forming a transistor. A gate oxide layer is formed over a semiconductive substrate. The gate oxide layer comprises silicon dioxide. The gate oxide layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer, and the layer is maintained at less than or equal to 400.degree. C. during the exposing. Subsequently, the nitrogen within the layer is thermally annealed to bond at least a majority of the nitrogen to silicon. At least one conductive layer is formed over the gate oxide layer. Source/drain regions are formed within the semiconductive substrate, and are gatedly connected to one another by the at least one conductive layer. The invention also encompasses transistor structures.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
MICRON TECHNOLOGY, INC.BOISE, ID19078

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Moore, John T Boise, ID 192 3146
Rueger, Neal R Boise, ID 74 720
Sandhu, Gurtej S Boise, ID 1097 22579

Cited Art Landscape

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* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
U.S. BANK NATIONAL ASSOCIATION (1)
* 2009/0215,253 Method of Forming a Nitrogen-Enriched Region within Silicon-Oxide-Containing Masses 2 2008
 
GLOBALFOUNDRIES SINGAPORE PTE. LTD. (2)
* 7928020 Method of fabricating a nitrogenated silicon oxide layer and MOS device having same 0 2007
* 2009/0088,002 METHOD OF FABRICATING A NITROGENATED SILICON OXIDE LAYER AND MOS DEVICE HAVING SAME 5 2007
 
MICRON TECHNOLOGY, INC. (3)
* 8440515 Method of forming a field effect transistor 5 2008
* 8058130 Method of forming a nitrogen-enriched region within silicon-oxide-containing masses 0 2008
8802520 Method of forming a field effect transistor having source/drain material over insulative material 3 2013
* Cited By Examiner

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