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Abstract

Surface of a thin film formed on a surface of substrate of Al.sub.xGa.sub.yIn.sub.1-x-yAs.sub.zP.sub.1-z (0.ltoreq.x<1, 0.ltoreq.y and z.ltoreq.1) including substances GaAs and InP is irradiated with electron beams controlled at any arbitrary electron beam diameter and current density so as to cause any natural oxide film formed on GaAs surface to undergo selective Ga.sub.2O.sub.3 substitution or formation. Thereafter, the temperature of the substrate is adjusted to given temperature so as to effect detachment of the natural oxide film at region other than that of Ga.sub.2O.sub.3 substitution. Selective growth of a Group III-V compound semiconductor crystal is carried out on the substrate on its side of natural oxide film detachment in accordance with the molecular beam epitaxial growing technique to thereby achieve an increase of substrate density. On-site formation of a circuit pattern having the crystal film thickness along the direction of crystal growth uniformalized on the order of nanometers is accomplished.

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First Claim