Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram
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United States of America Patent
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Oct 7, 2008
Grant Date -
Jul 26, 2007
app pub date -
Jan 24, 2006
filing date -
Jan 24, 2006
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Abstract
A method for manufacturing a self aligned narrow structure over a wider structure based on mask trimming. A method for manufacturing a memory device comprises forming an electrode layer on a substrate which comprises circuitry made using front-end-of-line procedures. The electrode layer includes a first electrode and a second electrode, and an insulating member between the first and second electrodes for each phase change memory cell to be formed. A patch of memory material is formed on the top surface of the electrode layer across the insulating member for each memory cell to be formed. The patch and the first and second electrodes are formed using a self-aligned process based on mask trimming.
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