Nanowire light emitting device and method of fabricating the same

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United States of America Patent

PATENT NO 7435996
APP PUB NO 20050227391A1
SERIAL NO

11100377

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Abstract

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A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer formed on a substrate, a plurality of nanowires vertically formed on the first conductive layer, each of the nanowires having an n-type doped portion and a p-type doped portion, a light emitting layer between the n-type doped portion and the p-type doped portion, first and second conductive organic polymers filling a space corresponding to the p-type doped portion and the n-type doped portion, respectively, and a second conductive layer formed on the nanowires. The organic polymers dope the corresponding surface of the nanowires by receiving electrons from the corresponding surface of the nanowires or by providing electrons to the surface of the nanowires.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Byoung-lyong Seoul, KR 67 783
Jin, Young-gu Hwaseong-si, KR 88 1602
Kim, Jong-seob Suwon-si, KR 74 621
Lee, Hyo-sug Suwon-si, KR 23 139
Lee, Sung-hoon Yongin-si, KR 71 679

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