Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
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United States of America Patent
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Oct 21, 2008
Grant Date -
Oct 26, 2006
app pub date -
Jan 30, 2006
filing date -
Feb 4, 2005
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Abstract
Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 atomic % or greater substitutional carbon. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.
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