Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
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United States of America Patent
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Oct 21, 2008
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Apr 5, 2002
filing date -
Apr 5, 2002
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Abstract
A method of silicon layer deposition using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a silicon-containing precursor and a reducing gas on a substrate structure. Thin film transistors, such as for example a bottom-gate transistor or a top-gate transistor, including one or more silicon layers may, be formed using such cyclical deposition techniques.
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