Lanthanide doped TiOx dielectric films by plasma oxidation
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United States of America Patent
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Oct 21, 2008
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app pub date -
Jan 7, 2005
filing date -
Aug 15, 2002
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Abstract
A dielectric film containing lanthanide doped TiO.sub.x and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO.sub.2. A dielectric film is formed by evaporation of Ti, a lanthanide, and oxidation of the evaporated Ti/lanthanide film using an oxygen plasma.
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