Method, apparatus and computer program product for stepped reset programming process on programmable resistive memory cell
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United States of America Patent
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Oct 21, 2008
Grant Date -
Jul 10, 2008
app pub date -
Jan 9, 2007
filing date -
Jan 9, 2007
priority date (Note) -
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Abstract
A method, system and computer program product for resetting a phase change memory cell having a memory cell threshold voltage is disclosed. The method includes reading a resistance of the memory cell. If the resistance is larger than a chosen resistance, the resetting of the memory cell ends. Otherwise, the method proceeds by applying a voltage, larger than the memory cell threshold voltage, to the bit line, and applying a voltage V.sub.WL, larger than the access device threshold voltage, to the word line. The resistance of the memory cell is again read. If the resistance is larger than the chosen resistance, the resetting of the memory cell ends. Otherwise, the method proceeds by applying a voltage, larger than the memory cell threshold voltage, to the bit line, increasing voltage V.sub.WL by a voltage .DELTA.V and applying the increased voltage V.sub.WL to the word line.
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