Method of determining voltage compensation for flash memory devices

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7440333
APP PUB NO 20060120151A1
SERIAL NO

11340916

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present invention determines or identifies programming variations for different groups within an array or memory device that properly program memory cells within the respective groups. Then, during programming operations for a given memory cell, programming voltages are applied according to the determined or identified programming variations for the group to which the given memory cell belongs. These adjusted programming variations facilitate successful programming of the particular memory cell.

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Patent Owner(s)

  • CYPRESS SEMICONDUCTOR CORPORATION;FASL LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hamilton, Darlene San Jose, CA 34 825
Hsia, Ed Saratoga, CA 4 365
Madhani, Alykhan Santa Clara, CA 5 298
Yu, Kenneth San Francisco, CA 20 385

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