Method of manufacturing semiconductor nanowires

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United States of America Patent

PATENT NO 7442575
APP PUB NO 20080081439A1
SERIAL NO

11540993

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Abstract

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A method is shown for manufacturing silicon semiconductor nanowires on graphite cloth conducting substrates. The nanowires are grown on the substrate by first depositing a thin gold film on the graphite cloth using RF sputtering. The substrate structure is then exposed to dilute silane, resulting in a uniform coating of Si nanowires on the cloth. A method is also shown for growing calcified mineral phases on such nanowire surfaces as well as for the incorporation of anti-osteoporotic drugs or anti-bacterial agents onto the surface of the nanowires. Lastly, a method is shown for promoting the growth of bone-forming cells onto the nanowire materials by exposing specially treated nanowires to bone marrow cells.

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Patent Owner(s)

Patent OwnerAddress
TEXAS CHRISTIAN UNIVERSITY2800 S UNIVERSITY DRIVE FORT WORTH TX 76129

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Coffer, Jeffery L Fort Worth, TX 2 51

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