Substrate electron injection techniques for programming non-volatile charge storage memory cells and for controlling program disturb
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United States of America Patent
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Oct 28, 2008
Grant Date -
Sep 20, 2007
app pub date -
May 18, 2007
filing date -
Dec 23, 2004
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Abstract
A programming technique for a flash memory causes electrons to be injected from the substrate into charge storage elements of the memory cells. The source and drain regions of memory cells along a common word line or other common control gate line being programmed by a voltage applied to the common line are caused to electrically float while the source and drain regions of memory cells not being programmed have voltages applied thereto. This programming technique is applied to large arrays of memory cells having either a NOR or a NAND architecture.
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