Methods for fabricating current-carrying structures using voltage switchable dielectric materials
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United States of America Patent
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Nov 4, 2008
Grant Date -
Feb 24, 2005
app pub date -
Sep 14, 2004
filing date -
Aug 27, 1999
priority date (Note) -
Expired
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Abstract
A method is provided for fabricating current-carrying formation on substrates. The method includes providing a substrate including a layer of a voltage switchable dielectric material, forming a mask over the layer of the voltage switchable dielectric material, and forming an electrically conductive layer. The mask includes gaps and the electrically conductive layer is formed in the gaps. The voltage switchable dielectric material has a characteristic voltage and the electrically conductive layer is formed by applying a voltage in excess of the characteristic voltage to the substrate and depositing the electrically conductive material through an electrochemical process such as electroplating.
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