Pulse generation circuit

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7446589
APP PUB NO 20060097768A1
SERIAL NO

11319729

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Pulse generation circuit has a P-MOS transistor having a drain electrode connected to a first power source; a first N-MOS transistor having a drain electrode connected to the source electrode of the P-MOS transistor; a second N-MOS transistor having a drain electrode connected to the source electrode of the first N-MOS transistor, a gate electrode receiving an input pulse signal, and a source electrode connected to the second power source; a delay circuit having an input terminal connected to the source electrode of the P-MOS transistor and the drain electrode of the first N-MOS transistor and an output terminal connected to gate electrode of the P-MOS transistor and gate electrode of the first N-MOS transistor; an inverter input connected to the source electrode of the P-MOS transistor and the drain electrode of the second N-MOS transistor for outputting a generated pulse; and a keeper keeping voltage level to the inverter.

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Patent Owner(s)

  • FUJITSU LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ijitsu, Kenji Kawasaki, JP 7 24

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