Wavelength locked laser including integrated wavelength selecting total internal reflection (TIR) structure
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United States of America Patent
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Nov 11, 2008
Grant Date -
Oct 12, 2006
app pub date -
Apr 12, 2005
filing date -
Apr 12, 2005
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An integrated light emitting semiconductor device having integrated feedback for wavelength locking comprises a semiconductor substrate including a waveguide region having a gain section having a gain media therein, and an out-coupling perturbation integrated with the device disposed proximate to the waveguide. A total internal reflection (TIR) structure for providing optical feedback is integrated with the device and disposed in a spaced apart relation relative to the out-coupling perturbation. At least one of the out-coupling perturbation and the TIR structure include a grating or prism to provide dispersion to send different wavelengths of light in different directions. The out-coupling perturbation is preferably a grating that has a grating period that is small enough to allow for only the +1 diffracted order to propagate.
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