Nanowire light emitting device and method of fabricating the same
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United States of America Patent
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Nov 18, 2008
Grant Date -
Oct 13, 2005
app pub date -
Apr 7, 2005
filing date -
Apr 7, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer on a substrate, a plurality of nanowires on the first conductive layer, each nanowire having a p-type doped portion and an n-type doped portion on both ends, a light emitting layer between the p-type doped portion and n-type doped portion, and a second conductive layer formed on the nanowires. The doped portions are formed by adsorbing molecules around a circumference thereof.
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