Insulated gate field effect semiconductor devices and method of manufacturing the same
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United States of America Patent
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Nov 25, 2008
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N/A
app pub date -
Sep 14, 2004
filing date -
Aug 26, 1991
priority date (Note) -
Expired
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Abstract
An LDD structure is manufactured to have a desired aspect ratio of the height to the width of a gate electrode. The gate electrode is first deposited on a semiconductor substrate followed by ion implantation with the gate electrode as a mask to form a pair of impurity regions. The gate electrode is then anodic oxidized to form an oxide film enclosing the electrode. With the oxide film as a mask, highly doped regions are formed by ion implantation in order to define lightly doped regions between the highly doped regions and the channel region located therebetween.
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