Semiconductor device and method for fabricating the same
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United States of America Patent
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Nov 25, 2008
Grant Date -
N/A
app pub date -
Apr 7, 2000
filing date -
Apr 12, 1999
priority date (Note) -
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status (Latency Note)
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Abstract
The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.
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