Semiconductor structure having recess with conductive metal
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United States of America Patent
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Nov 25, 2008
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N/A
app pub date -
Jul 6, 2000
filing date -
Jan 20, 1998
priority date (Note) -
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Abstract
A semiconductor structure includes a semiconductor substrate, a recess located in at least one major surface of the substrate, an electrical insulating layer located over the at least one major surface and in the recess, a conductive barrier located over the insulating layer and in the recess and over the at least one major surface, a plating seed layer located over the conductive barrier within the recess only, and a conductive metal in the recess only.
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