Apparatus and method for detecting over-programming condition in multistate memory device
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United States of America Patent
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Nov 25, 2008
Grant Date -
Aug 5, 2004
app pub date -
Jul 29, 2003
filing date -
Oct 24, 1996
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An apparatus and method for detecting an over-programming condition in a multistate memory cell. The invention is also directed to identifying the over-programmed cells and providing an alternate location at which to write the data intended for the over-programmed cell. An over-programmed state detection circuit generates an error signal when the data contained in a multistate memory cell is found to be over-programmed relative to its intended programming (threshold voltage level) state. Upon detection of an over-programmed cell, the programming operation of the memory system is modified to discontinue further programming attempts on the cell. The over-programmed state detection circuit is also used to assist in correcting for the over-programming state, permitting the programming error to be compensated for by the memory system.
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