High-voltage vertical transistor with a multi-gradient drain doping profile
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United States of America Patent
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Dec 2, 2008
Issued Date -
N/A
app pub date -
Dec 19, 2007
filing date -
Sep 7, 2001
priority date (Note) -
Expired
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Abstract
A high-voltage transistor includes first and second trenches that define a mesa in a semiconductor substrate. First and second field plate members are respectively disposed in the first and second trenches, with each of the first and second field plate members being separated from the mesa by a dielectric layer. The mesa includes a plurality of sections, each section having a substantially constant doping concentration gradient, the gradient of one section being at least 10% greater than the gradient of another section. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
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