Thyristor-based semiconductor memory and memory array with data refresh
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United States of America Patent
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Dec 2, 2008
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N/A
app pub date -
Jun 22, 2005
filing date -
Jun 22, 2005
priority date (Note) -
Expired
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Abstract
A new memory cell can contain only a single thyristor. There is no need to include an access transistor in the cell. In one embodiment, the thyristor is a thin capacitively coupled thyristor. The new memory cell can be connected to word, bit, and control lines in several ways to form different memory arrays. Timing and voltage levels of word, bit and control lines are disclosed.
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