Phosphor for phosphor-converted semiconductor light emitting device
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United States of America Patent
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Dec 9, 2008
Grant Date -
Oct 27, 2005
app pub date -
Apr 21, 2004
filing date -
Apr 21, 2004
priority date (Note) -
Expired
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Abstract
A semiconductor light emitting device comprising a light emitting layer configured to emit light of a first wavelength disposed between an n-type region and a p-type region is combined with a cerium-doped garnet phosphor having a wider excitation spectrum than conventional cerium-doped garnet phosphors. In some embodiments, the phosphor has a cerium concentration between about 4 mol % and about 8 mol %.
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