Transistor using an isovalent semiconductor oxide as the active channel layer

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Dec 9, 2008
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Mar 2, 2006
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Oct 25, 2005
filing date
Mar 12, 2004

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Abstract

A semiconductor device can include a channel including an oxide comprising a combination of isovalent cations selected from within the D block and the P block of the Periodic Table.

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HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Herman, Gregory S	Albany, OR	71	20398
Hoffman, Randy L	Corvallis, OR	23	28117

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Transistor using an isovalent semiconductor oxide as the active channel layer

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United States of America Patent

11257935

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PATENT NO	7462862
APP PUB NO	20060043377A1
SERIAL NO	11257935
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
December 09, 2008	US,7462862,B2 US7462862B2	GRANTED PATENT AS SECOND PUBLICATION
March 02, 2006	US,20060043377,A1 US20060043377A1	FIRST PUBLISHED PATENT APPLICATION

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11257935

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