Memory element with reduced-current phase change element
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United States of America Patent
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Dec 9, 2008
Grant Date -
Aug 14, 2008
app pub date -
Jun 28, 2007
filing date -
Feb 8, 2007
priority date (Note) -
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Abstract
A memory device having a reduced-thickness phase change film is described along with methods for manufacture. The device includes an electrode element, in electrical contact with a phase change layer. The latter element is formed from a memory material having at least two solid phases. A top electrode element makes electrical contact with the phase change layer at a location remote from the contact location of the electrode element. This construction produces a current flow through the phase change element in which at least a portion thereof lies in a path transverse to the current flow path within the electrode element.
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