Method for depositing tungsten-containing layers by vapor deposition techniques
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United States of America Patent
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Dec 16, 2008
Grant Date -
Sep 20, 2007
app pub date -
May 15, 2007
filing date -
Jun 28, 2000
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Abstract
In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.
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