Metal chalcogenide composite nano-particles and layers therewith
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United States of America Patent
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Dec 23, 2008
Grant Date -
Jun 3, 2004
app pub date -
Sep 11, 2003
filing date -
Sep 12, 2002
priority date (Note) -
Expired
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Abstract
A metal chalcogenide composite nano-particle comprising a metal capable of forming p-type semiconducting chalcogenide nano-particles and a metal capable of forming n-type semiconducting chalcogenide nano-particles, wherein at least one of the metal chalcogenides has a band-gap between 1.0 and 2.9 eV and the concentration of the metal capable of forming p-type semiconducting chalcogenide nano-particles is at least 5 atomic percent of the metal and is less than 50 atomic percent of the metal; a dispersion thereof; a layer comprising the nano-particles; and a photovoltaic device comprising the layer.
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