Method of fabricating oxide semiconductor device

United States of America Patent

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Dec 23, 2008
Grant Date
Mar 8, 2007
app pub date
Aug 24, 2006
filing date
Sep 6, 2005

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Expired

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Abstract

A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy ray.

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Patent Owner(s)

CANON KABUSHIKI KAISHA

International Classification(s)

H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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[Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Kaji, Nobuyuki	Kawasaki, JP	22	9145
Yabuta, Hisato	Machida, JP	62	17336

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Method of fabricating oxide semiconductor device

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United States of America Patent

11466950

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PATENT NO	7468304
APP PUB NO	20070054507A1
SERIAL NO	11466950
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity Expired	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
December 23, 2008	US,7468304,B2 US7468304B2	GRANTED PATENT AS SECOND PUBLICATION
March 08, 2007	US,20070054507,A1 US20070054507A1	FIRST PUBLISHED PATENT APPLICATION

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11466950

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