Thermally insulated phase change memory device

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United States of America Patent

PATENT NO 7471555
APP PUB NO 20070109836A1
SERIAL NO

11352755

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A thermally insulated memory device includes a memory cell, the memory cell having electrodes with a via extending therebetween, a thermal insulator within the via and defining a void extending between the electrode surfaces. A memory material, such as a phase change material, is within the void and electrically couples the electrodes to create a memory material element. The thermal insulator helps to reduce the power required to operate the memory material element. An electrode may contact the outer surface of a plug to accommodate any imperfections, such as the void-type imperfections, at the plug surface. Methods for making the device and accommodating plug surface imperfections are also disclosed.

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Patent Owner(s)

Patent OwnerAddress
MACRONIX INTERNATIONAL CO LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lung, Hsiang-Lan Elmsford, NY 320 9851

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