Process for producing GaN substrate
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United States of America Patent
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Jan 20, 2009
Grant Date -
Nov 9, 2006
app pub date -
Mar 19, 2004
filing date -
Mar 19, 2003
priority date (Note) -
Expired
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Abstract
A process for producing an inexpensive large high-quality GaN substrate which comprises forming a MgO buffer layer on a high-quality substrate, generating a ZnO layer on the MgO buffer layer while performing polarity control, growing a GaN layer on the ZnO layer while performing polarity control, and melting the ZnO layer, thereby producing a GaN substrate.
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