Semiconductor device manufacturing method
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United States of America Patent
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Jan 20, 2009
Grant Date -
Aug 28, 2008
app pub date -
Apr 25, 2008
filing date -
May 30, 2003
priority date (Note) -
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Abstract
A method of manufacturing a semiconductor device by forming an exposure mask blank including a substrate and a light-shielding film formed thereon, comprising measuring a first flatness of each of a plurality of substrates before formation of a light-shielding film, predicting, on the basis of the first flatness, a second flatness of each substrate when chucked on an exposure apparatus, selecting from the plurality of substrates, at least one substrate having a predetermined flatness on the basis of the second flatness, predicting a desired third flatness of the at least one substrate after a light-shielding film is formed on the substrate, forming a light-shielding film on the selected at least one substrate, measuring a fourth flatness of the at least one substrate having the formed light-shielding film, determining whether the at least one substrate having the light-shielding film has the desired third flatness by comparing the fourth flatness with the third flatness, then patterning an exposure mask, chucking it in the exposure apparatus, and transferring an image onto a predetermined substrate.
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