Gasless high voltage high contact force wafer contact-cooling electrostatic chuck
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 20, 2009
Grant Date -
Mar 2, 2006
app pub date -
Aug 26, 2004
filing date -
Aug 26, 2004
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of electrostatically chucking a wafer while removing heat from the wafer in a plasma reactor includes providing a polished generally continuous surface on a puck, placing the wafer on the polished surface of the puck and cooling the puck. A chucking voltage is applied to an electrode within the puck to electrostatically pull the wafer onto the surface of the puck with sufficient force to attain a selected heat transfer coefficient between contacting surfaces of the puck and wafer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully