Memory cell with separate read and program paths

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7483292
APP PUB NO 20080186761A1
SERIAL NO

11672125

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A memory cell includes a bit line, a read word line and a program word line, and a read device having a second read terminal connected to the read word line and a first read terminal. A program device has a second program terminal connected to the program word line and a first program terminal. A memory element includes a memory region, between first and second memory element terminals, comprising a memory material having an electrical property that can be changed by the application of energy. The first memory element terminal is connected to the first read terminal and the second memory element terminal is connected to the bit line. An energy emitting element comprises first and second spaced apart energy emitting element terminals and an energy emitting region between the terminals and in an energy-transmitting relationship with the memory region. The first energy emitting element terminal is connected to the first program terminal and the second energy emitting element terminal is connected to the bit line.

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Patent Owner(s)

Patent OwnerAddress
MACRONIX INTERNATIONAL CO LTDHSINCHU

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lung, Hsiang-Lan Elmsford, US 320 9851

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