Method and apparatus for refreshing programmable resistive memory
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United States of America Patent
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Jan 27, 2009
Grant Date -
Oct 30, 2008
app pub date -
Jul 13, 2007
filing date -
Apr 24, 2007
priority date (Note) -
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Abstract
Nonvolatile memory cells with programmable resistive memory elements, such as chalcogenide material elements, undergo a refresh operation. A refresh operation includes a hot signal and a cold signal, where the hot signal has higher power than a reset signal, and a cold signal has a longer duration than a set signal.
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