Thin film forming method
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United States of America Patent
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Feb 3, 2009
Grant Date -
Mar 1, 2007
app pub date -
Oct 25, 2006
filing date -
Jun 8, 2000
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Abstract
A method for forming thin films of a semiconductor device is provided. The thin film formation method presented here is based upon a time-divisional process gas supply in a chemical vapor deposition (CVD) method, where the process gases are supplied and purged sequentially, and additionally plasma is generated in synchronization with the cycle of pulsing reactant gases. A method of forming thin films that possess a property of gradient composition profile is also presented.
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